Small Signal MOSFETs | SI3457DV

シングルPチャネル ロジックレベル PowerTrench® MOSFET

Obsolete

Datasheet

購入

Overview

このPチャンネルMOSFETは、フェアチャイルドの高度なPowerTrenchプロセスを使用して製造されます。 バッテリーパワーマネージメント用途に最適化されています。

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  • -4 A、-30 V。
  • RDS(ON) = 50 mΩ @ VGS = -10 V
  • RDS(ON) = 75 mΩ @ VGS = -4.5 V少量のゲート電荷
  • 特に低いRDS(ON)用の高性能トレン
  • High performance trench technology for extremelylow RDS(ON)

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

SI3457DV

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

TSOT-23-6

Small Signal

Logic

0

Single

0

-30

50

25

-3

-4

1.6

NA

-

-

6

NA

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: SI3457DV

Equivalent to wafer fab process: TT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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