IGBT Modules | NXH160T120L2Q1

パワー・インテグレーテッド・モジュール (PIM)、IGBT 1200 V、160 A および 650 V、100 A

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Overview

NXH160T120L2Q1 は、分岐 T タイプ中性点 3 レベル・インバータを含むパワー・インテグレーテッド・モジュール (PIM) で、 逆ダイオードを搭載した 160A/1200V ハーフブリッジ IGBT 2 つ、中性点 100A/1200V レクティファイヤ 2 つ、逆ダイオードを搭載した 100A/650V 中性点 IGBT 2 つ、ハーフブリッジ 100A/650V レクティファイヤ、および負温度係数 (NTC) サーミスタで構成されています。この製品は圧入およびはんだピン・バージョンで提供されます。

  • Solar Inverter DC-AC stage
  • UPS DC-AC stage
  • Battery Storage DC-AC stage

  • Solar Inverter
  • UPS
  • Battery Storage

  • 1200V IGBT Specifications: VCE(SAT) = 2.1V @ 160A, ESW = 6.3mJ @ 100A
  • 650V IGBT Specifications: VCE(SAT) = 1.65V @ 150A, ESW = 3.8mJ @ 100A
  • Thermistor
  • 150A rated half bridge diodes

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NXH160T120L2Q1PG

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Obsolete

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Pb

A

H

P

Q1

180AD

NA

0

BTRAY

21

N

Split T-Type Inverter

1200

160

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2.2

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NXH160T120L2Q1SG

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Lifetime

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CAD Model

Pb

A

H

P

Q1

180AQ

NA

0

BTRAY

21

N

Split T-Type Inverter

1200

160

2.1

2.2

Industrial

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Die Related Summary Data

Device: NXH160T120L2Q1PG

Equivalent to wafer fab process: BP STD LINEAR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BP STD LINEAR

10

12120914040

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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