IGBT Modules | NXH160T120L2Q2F2S1

パワー・インテグレーテッド・モジュール (PIM)、IGBT 1200 V、160 A および 650 V、100 A

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NXH160T120L2Q2F2SG は、分岐 T タイプ中性点 3 レベル・インバータを含むパワー・インテグレーテッド・モジュール (PIM) で、 逆ダイオードを搭載した 160A/1200V ハーフブリッジ IGBT 2 つ、中性点 120A/1200V レクティファイヤ 2 つ、逆ダイオードを搭載した 60A/650V 中性点 IGBT 2 つ、ハーフブリッジ 100A/650V レクティファイヤ、および負温度係数 (NTC) サーミスタで構成されています。

  • DC-AC Stage

  • Solar Inverter
  • UPS

  • 650 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 uJ
  • 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 uJ
  • Baseplate
  • Solderable Pins
  • T−type Neutral Point Clamped Three−level Inverter Module
  • Thermistor

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NXH160T120L2Q2F2S1G

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Pb

A

H

P

Q2

180AK

NA

0

BTRAY

36

Y

Split T-Type Inverter

1200

160

2.1

2.2

Industrial

$102.2872

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Die Related Summary Data

Device: NXH160T120L2Q2F2S1G

Equivalent to wafer fab process: TRENCH IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

TRENCH IGBT

0

8782900981

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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