Si/SiCハイブリッド・モジュールにはIGBT、シリコン・ダイオード、SiCダイオードが統合されており、ソーラーインバータ、エネルギー貯蔵システムおよび無停電電源装置のDC-ACステージで使用されます。
Hybrid Si/SiC (Silicon/Silicon Carbide) modules are integrated IGBT power modules with high power density. They have lower switching losses than nonhybrid modules, and they can also work at higher temperatures than other types of semiconductors.
Si/SiC hybrid modules have several uses including being used in high-power applications that need low losses. They may also be used in higher temperature environments than comparable Si modules. For systems requiring high-frequency switching, Si/SiC hybrid modules provide better efficiency.
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Pb
A
H
P
Dual Boost
1200
50
1.77
1.44
Q0
NA
0
Y
$47.1372
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NXH100B120H3Q0PG
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Pb
A
H
P
Dual Boost
1200
50
1.77
1.44
Q0
NA
0
Y
$47.1372
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NXH100B120H3Q0SG
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Pb
A
H
P
Dual Boost
1200
50
1.77
1.44
Q0
NA
0
Y
$47.1372
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NXH100B120H3Q0STG
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Pb
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H
P
Dual Boost
1200
50
1.77
1.44
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NA
0
Y
$47.1372
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NXH100B120H3Q0PTG
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Pb
A
H
P
Dual Boost
1200
50
1.77
1.44
Q0
NA
0
Y
$47.1372
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Pb
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Split T-Type NPC Inverter
1200
200
1.86
1.5
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NA
0
Y
$107.5596 - $107.7343
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NXH200T120H3Q2F2STG
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Split T-Type NPC Inverter
1200
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1.86
1.5
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NA
0
Y
$107.7343
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NXH200T120H3Q2F2SG
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Split T-Type NPC Inverter
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1.86
1.5
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0
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$107.5596
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1.65
1.48
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$0.0 - $66.9859
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3 Channel Boost
1200
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1.65
1.48
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NA
0
Y
$66.9859
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NXH240B120H3Q1SG
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NXH240B120H3Q1S1G
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92
2
1.46
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$79.1279
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92
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1.8
1.42
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NA
0
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$111.933
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NXH300B100H4Q2F2SG
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with Schottky Diode
1000
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1.8
1.42
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0
F
$111.933
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1000
100
1.8
1.42
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0
F
$111.933
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NXH350N100H4Q2F2PG
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NXH350N100H4Q2F2SG
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Pb
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I-Type NPC Inverter
1000
350
1.45
2.03
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N
Price N/A
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Pb
A
H
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I-Type
1000
375
1.63
1.5
Q2
NA
0
F
$138.8267 - $142.1392
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NXH350N100H4Q2F2S1G
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Pb
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375
1.63
1.5
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0
F
$142.1392
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NXH350N100H4Q2F2P1G
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1000
375
1.63
1.5
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NA
0
F
$138.8267
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NXH400N100H4Q2F2SG
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Pb
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H
P
I-Type
1000
400
1.77
1.5
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NA
0
F
$182.825
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NXH400N100H4Q2F2PG
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Pb
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H
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1.77
1.5
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NA
0
F
$182.825
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