Si/SiC Hybrid Modules | NXH240B120H3Q1

パワー・インテグレーテッド・モジュール (PIM)、3 チャネル 1200 V IGBT + SiC ブースト、80 A IGBT および 20 A SiC ダイオード

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Overview

NXH240B120H3Q1PG は 3 チャネル 1200 V IGBT + SiC ブースト・モジュールです。各チャネルは、高速スイッチング 80 A IGBT、20 A SiC ダイオード、バイパス・ダイオードおよび IGBT 保護ダイオードで構成されています。このモジュールは内蔵サーミスタがあり、圧入ピンもあります。

  • Solar Inverter Boost Stage

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  • 1200 V Fast Switching IGBTs
  • 1200 SiC Diodes
  • Low Vf bypass diodes
  • Press-fit pins

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NXH240B120H3Q1PG

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Active

CAD Model

Pb

A

H

P

Q1

180AX

NA

0

BTRAY

21

Y

3 Channel Boost

1200

80

1.65

1.48

$66.9859

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NXH240B120H3Q1SG

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CAD Model

Pb

A

H

P

Q1

180AD

NA

-

BTRAY

21

N

3 Channel Boost

1200

80

1.65

1.48

Price N/A

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Die Related Summary Data

Device: NXH240B120H3Q1PG

Equivalent to wafer fab process: SIC

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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