Si/SiC Hybrid Modules | NXH450B100H4Q2

Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode

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Overview

The NXH450B100H4Q2 is a three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.

  • MPPT Boost Stage

  • 1500V Decentralized Utility-Scale Solar Inverter
  • Energy Storage Systems

  • Module with low thermal impedance baseplate
  • Solder and press-fit options
  • 1000V low VCE(sat) fast switching IGBTs and 1200V SiC diode optimized combination for solar boost stage

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VBR Max (V)

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VF Typ (V)

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NXH450B100H4Q2F2PG

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CAD Model

Pb

A

H

P

Q2

180BG

NA

0

BTRAY

36

Y

3 Channel Symmetric Boost

1000

150

1.8

1.4

$119.7392

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NXH450B100H4Q2F2SG

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CAD Model

Pb

A

H

P

Q2

180BR

NA

0

BTRAY

36

Y

3 Channel Symmetric Boost

1000

150

1.8

1.4

$119.4924

More Details

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Die Related Summary Data

Device: NXH450B100H4Q2F2PG

Equivalent to wafer fab process: SIC

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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