NXH020F120MNF1: SiC Module, 4-PACK Full Bridge Topology, 1200 V, 20 mohm M1 SiC MOSFET

Datasheet: F1-4PACK SiC MOSFET Module
Rev. P0 (1570kB)
製品概要
材料組成を表示
製品変更通知
The NXH020F120MNF1 is a SiC MOSFET module containing a 20 mohm SiC MOSFET full bridge and an NTC thermistor in an F1 module.
特長   利点
     
  • Recommended gate voltage 18V - 20V
 
  • Improved RDS(ON) at higher voltage
  • Low thermal resistance
 
  • Improved efficiency or higher power density
  • Options for TIM or no TIM
 
  • Flexible solution for high reliability thermal interface
アプリケーション   最終製品
  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
 
  • Electric Vehicle Charger
  • Energy Storage System
  • Solar Inverter 3-phase
  • Uninterruptible Power Supply
Availability & Samples
Specifications
Interactive Block Diagram
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NXH020F120MNF1PG Active
Pb-free
Halide free
NXH020F120MNF1 PIM22 33.8x42.5 (PRESS FIT) 180BX NA BTRAY 28 $116.6905
NXH020F120MNF1PTG Active
Pb-free
Halide free
NXH020F120MNF1, with TIM PIM22 33.8x42.5 (PRESS FIT) 180BX NA BTRAY 28 $116.6905
マーケットリードタイム(週) : Contact Factory
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (mΩ)
Application
Package Type
NXH020F120MNF1PG  
 $116.6905 
Pb
H
 Active   
4-PACK
1200
20
EV Charging, Energy Infrastructure
PIM22 33.8x42.5 (PRESS FIT)
NXH020F120MNF1PTG  
 $116.6905 
Pb
H
 Active   
4-PACK
1200
20
EV Charging, Energy Infrastructure
PIM22 33.8x42.5 (PRESS FIT)
Case Outline
180BX   
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特集ビデオ
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