Silicon Carbide (SiC) Modules | NXH020U90MNF2

SiC Modules, Vienna Module 900V, 2 x 10 mohm SiC MOSFET, 1200V, 2 x 100A, F2 Package

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The NXH020U90MNF2 is a Vienna SiC Module with 2x 10mohm 900V SiC MOSFET switches and 2x 100A 1200V SiC diodes and a thermistor in an F2 package. The SiC MOSFET switches use M2 technology and are driven with 15V-18V gate drive.

  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations

  • Robust M2 planar SiC MOSFET technology
  • 15V to 18V gate drive

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NXH020U90MNF2PTG

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Pb

A

H

P

PIM20 56.7x42.5 (PRESS FIT)

180BZ

NA

0

BTRAY

20

F

Vienna

900

10

EV Charging, Energy Infrastructure

$160.2857

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Die Related Summary Data

Device: NXH020U90MNF2PTG

Equivalent to wafer fab process: SIC

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SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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