Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode

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Overview

The NXH80B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 80mohm/1200V SiC MOSFETs and two 20A/1200V SiC diodes. Two additional 30A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
  • Energy Storage Systems
  • SiC MOSFET Specification: 80 mΩ 1200 V
  • 30 A / 1600 V Bypass Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Thermistor

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NXH80B120MNQ0SNG

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CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

N

Two Channel Boost

1200

80

Solar Inverter, Energy Infrastructure

$62.1414

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