Protected MOSFETs | NID5001N

自己保護 MOSFET、42 V クランプ、温度および電流制限、ESD

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Overview

NID5001N は、オン・セミコンダクターの最新スマート MSOFET テクノロジ・プロセスを利用した、高度なパワー MOSFET シリーズの部品で、シリコン当たりのオン抵抗を可能な限り低くしながら、スマート機能を取り入れています。内蔵の温度制限と電流制限が連携して、短絡保護を提供します。 これらのデバイスは、アバランシェ・モードで高エネルギーに耐えられるようにドレイン-ゲート・クランプを内蔵しています。 このクランプは、想定外の電圧過渡に対する安全マージンを拡大します。 内蔵のゲート - ソース・クランプが静電放電 (ESD) 保護を提供します。

  • Low RDSon
  • Current Limitation
  • Thermal Shutdown with Automatic Restart
  • Short Circuit Protection
  • IDSS Specified at Elevated Temperature
  • Avalanche Energy Specified
  • Slew Rate Control for Low Noise Switching
  • Overvoltage Clamped Protection
  • Pb-Free Package is Available

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V(BR)DSS Min (V)

ID Typ (A)

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NID5001NT4

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3

369C

1

235

REEL

2500

N

N-Channel

42

33

29

64

Price N/A

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NID5001NT4G

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

N-Channel

42

33

29

64

Price N/A

More Details

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