RF Transistors | NSVF6003SB6

RF トランジスタ、NPN シングル、12 V、150 mA、fT = 7 GHz

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Overview

この RF トランジスタは低ノイズ・アンプ・アプリケーション向けに設計されています。CPH パッケージは、熱放射特性が優れているので、高温度環境での使用に適しています。AEC-Q101 認定済みで PPAP に対応しており、車載アプリケーション向きです。

  • Low Noise Amplifier

  • Car FM Radio
  • TV for Automotive

  • AEC-Q101 qualified and PPAP capable
  • Pb-Free, Halogen Free and RoHS compliance
  • High Current (IC = 150 mA)
  • Ultra miniature and thin 6 pin package
  • Large Collector Dissipation (800 mW)
  • High Gain (fT = 7 GHz typ)

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Polarity

IC Continuous (A)

VCEO(sus) Min (V)

hFE Min

hFE Max

PTM Max (W)

fT Min (MHz)

NF Typ. (dB)

|S21e| 2 Typ. (dB)

Reference Price

NSVF6003SB6T1G

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Lifetime

Similar Products
CAD Model

Pb

A

H

P

CPH-6

318BD

1

260

REEL

3000

N

NPN

0.15

12

100

180

0.8

7000

1.8

9

$0.1955

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信頼性データ

Die Related Summary Data

Device: NSVF6003SB6T1G

Equivalent to wafer fab process: SSD

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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