Schottky Diodes & Schottky Rectifiers | FYP2010DN

ショットキー・バリア・レクティファイヤ

Obsolete

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Overview

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  • 低フォワード電圧降下
  • 高周波数特性とスイッチング速度
  • 過電圧の保護のためのガードリング
  • スイッチモードパワーサプライ
  • フリーホイールのダイオード

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状態

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VRRM Min (V)

VF Max (V)

IRM Max (µA)

IO(rec) Max (A)

IFSM Max (A)

trr Max (ns)

Cj Max (pF)

Package Size (mm)

Reference Price

FYP2010DNTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

No

Dual & Common Cathode

100

0.75

100

20

150

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: FYP2010DNTU

Equivalent to wafer fab process: S3

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

S3

0

261074938

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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