Schottky Diodes & Schottky Rectifiers | MBRAF3200

200 V、3.0 A ショットキー・レクティファイヤ

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Overview

大面積の金属 - シリコン接合のパワーダイオードでショットキー・バリア原理を採用しています。最先端のジオメトリは、酸化物不動態化のエピタキシャル構造および金属オーバーレイ・コンタクトを備えています。サイズと重量がコンパクトであることが重要なシステムでの、表面実装アプリケーションの低電圧、高周波整流、還流/極性保護ダイオードに最適です。

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Very High Blocking Voltage - 200 V
  • 150°C Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • This is a Pb-Free Device

    Mechanical Characteristics:
  • Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
  • Weight: 95 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
  • Cathode Polarity Band
  • Device Meets MSL 1 Requirements
  • ESD Ratings: Machine Model = A
    Human Body Model = 1B

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MBRAF3200T3G

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Active

CAD Model

Pb

A

H

P

SMA-FL

403AA

1

260

REEL

5000

N

Single

200

0.84

1000

3

100

-

-

$0.2499

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Die Related Summary Data

Device: MBRAF3200T3G

Equivalent to wafer fab process: RECT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

RECT

3

19108175705

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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