Silicon Carbide (SiC) Diodes | FFSB20120A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellentthermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Max Junction Temperature 175°C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery/No Forward Recovery

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FFSB20120A

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Pb

A

H

P

D2PAK2 (TO-263-2L)

418BK

1

260

REEL

800

Y

D1

Single

1200

20

1.75

135

400

$3.5934

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