FFSD0665B-F085: Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Datasheet: Silicon Carbide Schottky Diode, 650 V, 6 A
Rev. 2 (301kB)
製品概要
信頼性データを表示する
材料組成を表示
製品変更通知
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
特長   利点
     
  • Max Junction Temperature 175 oC
 
  • PPAP capable
  • Avalanche Rated 24.5mJ
   
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 Qualified
   
アプリケーション   最終製品
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • PHEV-EV Onboard charger and DC -DC
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
FFSD0665B-F085 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
FFSD0665B-F085 DPAK-3 / TO-252-3 369AS 1 260 Tape and Reel 2500 $2.875
マーケットリードタイム(週) : Contact Factory
Avnet   (2020-08-19 00:00) : >1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSD0665B-F085  
 $2.875 
Pb
A
H
P
 Active   
D2
Single
650
6
1.7
28
160
DPAK-3 / TO-252-3
Case Outline
369AS   
過去に閲覧した製品
一覧をクリアする

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.