Silicon Carbide (SiC) Diodes | FFSH10120A-F085

SiC ショットキー・ダイオード 1200 V、10 A

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炭化ケイ素 (SiC) ショットキー・ダイオードは、シリコンに比べて優れたスイッチング性能 と高い信頼性を実現する新しい技術を採用しています。逆回復電流がなく、温度から独立したスイッチング特性で、優れた熱性能の炭化ケイ素は、次世代のパワー・セミコンダクターとなります。システムの利点として、最高の効率、高速動作周波数、電力密度の増加、EMI の削減、システムのサイズの縮小とコストの削減があります。

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  • Max Junction Temperature 175 °C
  • AEC-Q101 qualified and PPAP Capable
  • No Reverse Recovery / No Forward Recovery
  • High Surge Current Capacity
  • Ease of Paralleling
  • Positive Temperature Coefficient

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FFSH10120A-F085

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CAD Model

Pb

A

H

P

TO-247-2

340CL

NA

0

TUBE

450

Y

D1

Single

1200

10

1.75

90

200

$3.8731

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Die Related Summary Data

Device: FFSH10120A-F085

Equivalent to wafer fab process: SIC

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MTBF/MTTF (時間)

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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