Silicon Carbide (SiC) Diodes | FFSH30120ADN

シリコンカーバイドショットキーダイオード

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SiCショットキーダイオードは、シリコンカーバイドという新しい半導体材料を使用しているため、スイッチング損失がなく、Siダイオードより優れたシステム効率を実現します。動作周波数や電力密度を向上させ、システムのサイズやコストを削減できます。 信頼性が高いため、サージ時や過電圧状態でも安定した動作を保証

  • 最大接合部温度175°C
  • 電子なだれ定格145 mJ
  • 高サージ電流耐性
  • プラスの温度係数
  • 逆回復/順回復なし

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