Name: Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
Brand: Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
SKU: NDSH10170A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

Overview

EliteSiC family of Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

アプリケーション

Industrial

最終製品

UPS / ESS
Solar
EV Charger

特長

Max Junction Temperature 175 °C
Avalanche Rated 156 mJ
High Surge Current Capacity
Low I_R @ T_J:175 °C
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Low Vf @ T_J:175 °C

材料組成

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Family

Configuration

V_RRM (V)

I_F(ave) (A)

V_F (Max)

I_FSM (A)

I_R (Max) (µA)

Reference Price

NDSH10170A

Active

TO-247-2LD

TUBE

450

Single

1700

1.75

105

$4.4186

製品番号:

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Silicon Carbide (SiC) Diodes | NDSH10170A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

Overview

Product List

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