Silicon Carbide (SiC) Diodes | PCFFS20120AF

SiC ダイオード、1200V、20A、ダイ

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Overview

炭化ケイ素 (SiC) ショットキー・ダイオードは、 シリコンよりも優れたスイッチング性能と高い信頼性を実現する新しい技術を採用しています。逆回復電流がなく、温度から独立したスイッチング特性で、 優れた熱性能の炭化ケイ素は、次世代のパワー・セミコンダクタとなります。システムの利点として、最高の効率、高速動作周波数、電力密度の増加、EMI の削減、システムのサイズの縮小とコストの削減があります。

  • 最大接合部温度175°C
  • 電子なだれ定格200mJ
  • 高サージ電流耐性
  • プラスの温度係数
  • 並列化が容易
  • 逆回復/順回復なし

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VRRM (V)

IF(ave) (A)

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IFSM (A)

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PCFFS20120AF

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Pb

A

H

P

-

-

NA

0

MTFRM

1

Y

D1

Single

1200

20

1.72

135

200

$5.1267

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