Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L

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Overview

The new family of 1200V M3P planar SiC MOSFETs is optimized for power applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems
  • D2PAK-7L package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3P technology: 14mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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MSL Type

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Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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NTBG014N120M3P

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

260

F

M3P

1200

74

14

329

262

175

$34.1347

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