Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Power Supply
  • Low RDSon
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 18.4 mΩ at Vgs = 18V, Id = 60A

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Family

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ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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Tj Max (°C)

Reference Price

NTBG015N065SC1

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

F

M2

650

145

12

283

424

175

$16.0441

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