NTBG025N065SC1: Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L

Datasheet: Silicon Carbide (SiC) MOSFET
Rev. 0 (212kB)
製品概要
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • High Junction Temperature (Tj = 175°C)
 
  • Higher system reliability
  • Kelvin Source Configuration
 
  • Low gate noise and switching loss
  • Ultra Low Gate Charge (QG(tot) = 164 nC)
 
  • Low switching loss
  • Low Output Capacitance (Coss = 278 pF)
 
  • Low switching loss
  • Zero reverse recovery current of body diode
 
  • Higher system reliability in LLC and Phase shift full bridge circuit
  • 650V rated
   
  • 100% Avalanche Tested
   
  • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
   
  • Moisture Sensitivity Level 1 guarantee
   
  • Internal Gate Resistance: 1.5 Ω
   
アプリケーション   最終製品
  • Telecommunication
  • Cloud system
  • Industrial
 
  • Telecom power
  • Server power
  • UPS / ESS
  • Solar
技術資料 & デザイン・リソース
シミュレーション・モデル (3) データシート (1)
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Specifications
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内容
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MSL
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Case Outline
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NTBG025N065SC1 Active 
Pb-free
Halide free
NTBG025N065SC1, Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK−7L D2PAK7 (TO-263-7L HV) 1 260 Tape and Reel 800 $13.813
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Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTBG025N065SC1  
 $13.813 
Pb
H
 Active   
M2
650
106
19
164
278
175
D2PAK7 (TO-263-7L HV)
Case Outline
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