Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Charging Station
  • Motor Drive
  • Low On Resistance
  • Ultra Low Gate Charge
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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ECAD Models

Compliance

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MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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NTBG040N120SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

Y

M1

1200

60

40

106

139

175

$13.6778

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