Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • Power Supplies
  • Solar Inverter
  • UPS
  • Typical RDSon
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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ECAD Models

Compliance

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MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

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NTBG060N090SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

Y

M2

900

44

60

88

115

175

$7.8279

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