NTHL020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ, TO247−3L

Datasheet: Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M1, TO-247-3L
Rev. 3 (259kB)
製品概要
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製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Ultra Low Gate Charge
 
  • 196nC
  • High Junction Temperature
 
  • 175°C
  • 900V Rating
   
  • 100% UIL Tested
   
  • RoHS Compliant
   
アプリケーション   最終製品
  • UPS
  • DC-DC Converter
  • Boost Inverter
 
  • Solar
  • Power Devices
Availability & Samples
Specifications
Interactive Block Diagram
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTHL020N090SC1 Active
Pb-free
Halide free
NTHL020N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 20 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $17.8002
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTHL020N090SC1  
 $17.8002 
Pb
H
 Active   
M2
900
118
20
196
296
175
TO-247-3LD
Case Outline
340CX   
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