Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-3L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging
  • Solar Inverter
  • Network Power Supply
  • Server Power Supply
  • Charging Stations
  • Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A
  • High Speed Switching and Low Capacitance
  • 1200V
  • 100% UIL Tested

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Family

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Reference Price

NTHL020N120SC1

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

103

20

203

260

175

$21.93

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