Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L

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Overview

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 107 nC)
  • High Speed Switching with Low Capacitance (Coss = 106 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 29 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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Blocking Voltage BVDSS (V)

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NTHL030N120M3S

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

F

M3S

1200

73

29

107

106

175

$12.3321

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