Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

Favorite

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging
  • Solar Inverter
  • Network Power Supply
  • Charging Stations
  • Motor Control
  • High Speed Switching and Low Capacitance
  • Max RDS(on) = 224mΩ at Vgs = 20V, Id = 12A
  • 1200V
  • 100% UIL Tested

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

検索

Close Search

製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTHL160N120SC1

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

26

160

24

40

175

$3.9743

More Details

Show More

1-25 of 25

Products per page

Jump to :