Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L

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Overview

The new family of 1200V M3S planar EliteSiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • D2PAK-7L package for low common source inductance
  • 15V to 18V Gate Drive
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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NVBG022N120M3S

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CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

260

REEL

800

F

M3S

1200

58

22

148

148

175

$17.7105

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