NVH4L015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 12 mΩ, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4, 650 V, 12 mOhm, 142 A
Rev. 3 (220kB)
製品概要
材料組成を表示
製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive grade
  • 650V rated
   
  • Max RDS(on) = 18 mΩ at Vgs = 18V, Id = 75A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
アプリケーション   最終製品
  • Automotive DC/DC and PFC
  • Automotive Traction Inverter
 
  • Automotive On Board Charger
  • Automotive Traction Inverter
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NVH4L015N065SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVH4L015N065SC1 TO-247-4 340CJ 1 260 Tube 450 $15.9283
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVH4L015N065SC1  
 $15.9283 
Pb
A
H
P
 Active   
N-Channel
Single
650
142
12
283
424
175
TO-247-4
Case Outline
340CJ   
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