NVHL020N090SC1: Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-3L, 900 V, 20 mOhm, 118 A
Rev. 2 (262kB)
製品概要
材料組成を表示
製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 900V rated
   
  • Max RDS(on) = 28 mΩ at Vgs = 15V, Id = 60A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
アプリケーション   最終製品
  • Automotive PFC
  • Automotive DC/DC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
評価/開発ツール情報
製品 状態 Compliance 簡単な説明 アクション
SEC-6D6KW-OBC-SIC-GEVB Active
Pb-free
6.6kW OBC SiC model
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NVHL020N090SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL020N090SC1, Silicon Carbide MOSFET, N?Channel, 900 V, 20 m?, TO247?3L TO-247-3LD 340CX 1 260 Tube 450 $16.4195
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL020N090SC1  
 $16.4195 
Pb
A
H
P
 Active   
N-Channel
Single
900
118
20
196
296
175
TO-247-3LD
Case Outline
340CX   
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特集ビデオ
Utilizing Wide Bandgap in HEV/EV Charging Applications
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