Silicon Carbide (SiC) MOSFETs | NVHL060N090SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−3L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • OBC

  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive

  • Typical RDSon
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Qualified for Automotive According to AEC−Q101
  • Devices are Pb−Free and are RoHS Compliant

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NVHL060N090SC1

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CAD Model

Pb

A

H

P

TO-247-3LD

340CX

1

260

TUBE

450

Y

M2

900

46

60

87

113

175

$9.2434

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Die Related Summary Data

Device: NVHL060N090SC1

Equivalent to wafer fab process: SIC

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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