Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

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Overview

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • Typical RDS(on) = 65mΩ at Vgs =18V, Id = 15A
  • Qualified for Automotive According to AEC−Q101
  • New M3S technology: 65mohm RDS(ON) with low EON and EOFF losses
  • Devices are Pb−Free and are RoHS Compliant
  • 15V to 18V Gate Drive

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NVHL070N120M3S

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Pb

A

H

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TO-247-3LD

NA

0

TUBE

450

F

M3S

1200

34

65

57

57

175

$7.4913

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