IGBT/MOSFET Gate Drivers Optocouplers | FOD8314

1.0 A 出力電流、ゲートドライブ・オプトカプラ、延伸体 SOP 6 ピン・パッケージ

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FOD8314 シリーズは 1.0 A 出力電流、ゲートドライブ・オプトカプラで、中電力の IGBT/MOSFET を駆動することができます。モータ制御インバータ・アプリケーションや高性能電力システムに使用されるパワーIGBT/MOSFETの高速スイッチング駆動に最適です。FOD8314 シリーズは延伸体パッケージを活用して、8 mm の沿面/空間距離 (FOD8314T) を実現し、最適化された IC 設計により高絶縁電圧および高ノイズ耐量を確保しています。FOD8314 シリーズは、アルミニウム・ガリウムヒ素 (AlGaAs) 発光ダイオード (LED) が、プッシュプル MOSFET 出力段用高速ドライバ搭載集積回路に光結合されています。このデバイスは延伸体 6 ピン小型アウトライン・プラスチック・パッケージで提供されます。

  • AC and Brushless DC Motor Drives
  • Industrial Inverter
  • Uninterruptible Power Supply
  • Induction Heating
  • Isolated IGBT/Power MOSFET Gate Drive

  • FOD8314T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
  • 1.0 A Output Current Driving Capability for Medium-Power IGBT/MOSFET
    – Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
  • 20 kV/μs Minimum Common Mode Rejection
  • Wide Supply Voltage Range: 15 V to 30 V
  • Fast Switching Speed Over Full Operating Temperature Range
    – 500 ns Maximum Propagation Delay
    – 300 ns Maximum Pulse Width Distortion
  • Under-Voltage Lockout (UVLO) with Hysteresis
  • Extended Industrial Temperate Range: -40°C to 100°C
  • Safety and Regulatory Approvals:
    – UL1577, 5,000 VACRMS for 1 Minute
    – DIN EN/IEC60747-5-5, 1,140 V Peak Working Insulation Voltage

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FOD8314

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Pb

A

H

P

SOIC-6

751EL

1

260

TUBE

2000

N

7.5

5

1

500

300

12.7

11.2

20

5000

-40

100

$0.672

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FOD8314R2

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CAD Model

Pb

A

H

P

SOIC-6

751EL

1

260

REEL

1000

N

7.5

5

1

500

300

12.7

11.2

20

5000

-40

100

$0.5485

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FOD8314T

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Pb

A

H

P

SOIC6 W

751EM

1

260

TUBE

2000

N

7.5

5

1

500

300

12.7

11.2

20

5000

-40

100

$0.7014

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FOD8314TR2

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Pb

A

H

P

SOIC6 W

751EM

1

260

REEL

1000

N

7.5

5

1

500

300

12.7

11.2

20

5000

-40

100

$0.5677

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FOD8314TR2V

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CAD Model

Pb

A

H

P

SOIC6 W

751EM

1

260

REEL

1000

N

7.5

5

1

500

300

12.7

11.2

20

5000

-40

100

$0.646

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Die Related Summary Data

Device: FOD8314

Equivalent to wafer fab process: BB,GA

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BB,GA

0

58865369

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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