Phototransistor Output - DC Sensing Input Optocouplers | H11D3M

6 ピン DIP 高電圧フォトトランジスタ出力オプトカプラ

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Overview

4N38M、H11D1M、H11D3M、および MOC8204M はフォトトランジスタタイプの光結合型オプトアイソレータです。ガリウムヒ素赤外線放射ダイオードが高電圧 NPN シリコン・フォトトランジスタと結合されています。このデバイスは標準プラスチック 6 ピン・デュアルインライン・パッケージに収められています。

  • 家電製品
  • 産業用モーター

  • 高電圧:
  • MOC8204M、BVCEO= 400 V
  • H11D1M、BVCEO= 300 V
  • H11D3M、BVCEO= 200 V
  • 安全規制認可：
  • UL1577、4,170 VACRMS 1分間
  • DIN-EN/IEC60747-5-5、850 Vピーク動作絶縁電圧

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Channels

CTR (Min) (%)

CTR (Max) (%)

CTR tested @ IF (mA)

VCE(sat) (Max) (V)

BVCEO (Min) (V)

BVCBO (Min) (V)

BVECO (Min) (V)

ton (Max) (µs)

toff (Max) (µs)

VISO (Min) (V)

TOPR (Min) (°C)

TOPR (Max) (°C)

Reference Price

H11D3M

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CAD Model

Pb

A

H

P

PDIP-6

646BX

NA

0

BLKBG

1000

N

1

20

-

10

0.4

200

200

7

5

5

4200

-40

100

$0.3187

More Details

H11D3SM

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CAD Model

Pb

A

H

P

PDIP-6

646BY

1

260

BLKBG

1000

N

1

20

-

10

0.4

200

200

7

5

5

4200

-40

100

$0.3187

More Details

H11D3SR2M

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Active

CAD Model

Pb

A

H

P

PDIP-6

646BY

1

260

REEL

1000

N

1

20

-

10

0.4

200

200

7

5

5

4200

-40

100

$0.3763

More Details

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信頼性データ

Die Related Summary Data

Device: H11D3M

Equivalent to wafer fab process: BN,GA

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BN,GA

0

252701301

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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