3.75 kVRMS, 4.5-A/9-A Isolated Single Channel Gate Driver

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Overview

The NCP51152 is a family of isolated single-channel gate driver with 4.5-A/9-A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51152 offers short and matched propagation delays. The NCP51152xA provides a split output that controls the rise and fall times individually. The NCP51152xB has its VCC UVLO referenced to GND2 to get a true UVLO. The NCP51152 is available in a 4 mm SOIC-8 package and can support isolation voltage up to 3.75 kVRMS.

  • Power Supply
  • Telecom Infrastructure
  • Industrial Infrastructure
  • Motor Drives
  • Isolated Converters in DC-DC and AC-DC Power Supply
  • UPS & Solar Inverters
  • Servers & Datacom Converters
  • 4.5-A Peak Source, 9-A Peak Sink Output Current
  • 36 ns Propagation Delay with 5 ns Max Delay Matching
  • 3-V to 20-V Input Supply Voltage
  • 200V/ns dV/dt Immunity
  • 3.75 kVRMS Isolation for 1 Minute (per UL1577 Requirements)
  • Separated Outputs (NCP51152xA) or UVLO Referenced to GND2 (NCP51152xB)
  • UVLO options 6-V and 8-V for MOSFET, 12-V and 17-V for SiC

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

NCP51152BADR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

F

MOSFET

1

Single

Galvanic Isolation

1200

33

12

8.5

4.5

9

36

36

5

$0.976

More Details

NCP51152CADR2G

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Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

F

SiC MOSFET

1

Single

Galvanic Isolation

1200

33

12

8.5

4.5

9

36

36

5

$0.976

More Details

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