MOSFET/IGBT ドライバ、高電圧、ハイサイド/ローサイド

Lifetime

Overview

NCP5106 は、高電圧ゲートドライバ IC で、2 つの N チャネル・パワー MOSFET または IGBT を直接駆動する出力が 2 つあります。ハーフブリッジ構成バージョン B と、それ以外のハイサイド + ローサイド構成バージョン A があります。ブートストラップ技術を利用し、ハイサイド電源スイッチの適正な駆動を保証します。NCP5109 = 200V、NCP5106 = 600V と、2 つの入力は独立しています。

  • Half-Bridge Power Converters
  • Full-Bridge Converters
  • Electric Power Steering & Motor Control

  • Automotive power conversion

  • High Voltage Range: Up to 600 V
  • dV/dt Immunity ± 50 V/nsec
  • Gate Drive Supply Range from 10 V to 20 V
  • High and Low Drive Outputs
  • Output Source / Sink Current Capability 250 mA / 500 mA
  • 3.3 V and 5 V Input Logic Compatible
  • Up to Vcc Swing on Input Pins
  • Matched Propagation Delays Between Both Channels
  • Outputs in Phase with the Inputs
  • Independent Logic Inputs to Accommodate All Topologies (Version A)
  • Cross Conduction Protection with 100 ns Internal Fixed Dead Time (Version B )
  • Under Vcc LockOut (UVLO) for Both Channels
  • Pin-to-Pin Compatible with Industry Standards

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Power Switch

Number of Outputs

Topology

Isolation Type

Vin Max (V)

VCC Max (V)

Rise Time (ns)

Fall Time (ns)

Drive Source Current Typ (A)

Drive Sink Current Typ (A)

Turn On Prop. Delay Typ (ns)

Turn Off Prop. Delay Typ (ns)

Delay Matching

Reference Price

NCV5106ADR2G

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Lifetime

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

MOSFET / IGBT

2

Half-Bridge

Junction Isolation

600

20

85

35

0.25

0.5

100

100

35

$1.1371

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