Protected Power Switches | NCV451

3A 超小型低 Ron および制御ロード・スイッチ、自動放電パス付き

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Overview

NCV451A は外部ロジック・ピンで制御される超低 Ron MOSFET で、バッテリ寿命やポータブル・デバイスの自律性を最適化できます。実際に、NMOS 構造により電流消費を最適化することで、未使用時バッテリに接続された IC を絶縁し、リーク電流が無くなります。出力レールの残留電圧を除去する出力放電パスも組み込まれています。0.75 V から 5.5 V の広い入力電圧範囲と小型 DFNW6 2.2 x 2 mm、0.65 ピッチ・パッケージで提供されます。

  • ADAS Systems
  • Camera Module
  • Power Management

  • Automotive

  • DC Current Up to 3A
  • 21mΩ N MOSFET from 3.6V to 5.5V
  • DFNW6 2.2 x 2 mm, 0.65 pitch
  • Output Auto-Discharge
  • 0,75V - 5.5V Operating Range

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Case Outline

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MSL Temp (°C)

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ON Target

Over Current - Shutdown (Y/N)

Over Current - Current Source (Y/N)

Current Limit (FIXED/ADJ/NO)

Over Voltage Protection (Y/N)

Reverse Current Blocking (Y/N)

FAULT Signal (Y/N)

PGOOD (Y/N)

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Max Current (A)

Output Discharge (Y/N)

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NCV451AMNWTBG

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CAD Model

Pb

A

H

P

DFNW-6

507AF

1

260

REEL

3000

Y

-

-

-

-

-

-

-

-

-

3

-

-

-

0.75

5.5

-

-

-

-

$0.384

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信頼性データ

Die Related Summary Data

Device: NCV451AMNWTBG

Equivalent to wafer fab process: ONC25

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等価デバイス時間

MTBF/MTTF (時間)

FITS

ONC25

1

2712519294

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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