EEPROM Memory | CAT24C512C8UTR

512 Kb シリアル CMOS EEPROM、内部的には 1 ワードあたり 8 ビットの 65,536 ワードで編成されています。

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Overview

CAT24C512C8UTR は 512 Kb シリアル CMOS EEPROM で、内部的には 1 ワードあたり 8 ビットの 65,536 ワードで編成されています。128 バイト・ページの書き込みバッファを特長としており、標準 (100 kHz)、Fast (400 kHz) および Fast−Plus (1 MHz) I2C プロトコルをサポートします。WP ピンを High にすると、書き込み操作を禁止できます (これにより、メモリ全体が保護されます)。外部アドレス・ピンにより、同じバスで CAT24C512C8UTR デバイスには 8 つまで対応できます。On-Chip ECC (Error Correction Code) が、デバイスを高信頼性アプリケーションに適したものにします。

  • Wireless devices - Cell phones (Smartphone)

  • Smartphone
  • Wireless devices

  • Supports Standard, Fast and Fast−Plus I2C Protocol
  • 1.8 V to 5.5 V Supply Voltage Range
  • 128−Byte Page Write Buffer
  • Hardware Write Protection for Entire Memory
  • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs(SCL and SDA)
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • Industrial and Extended Temperature Range
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

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Die Related Summary Data

Device: CAT24C512C8UTR

Equivalent to wafer fab process: ONC18

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等価デバイス時間

MTBF/MTTF (時間)

FITS

ONC18

2

6465777234

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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