1 Mb, 3 V Parallel SRAM Memory

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Overview

The N01L63W3A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using advanced CMOS technology from ON Semiconductor to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L63W3A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40°C to +85°C and is available in JEDEC standard packages compatible with other standard 64 kb x 16 SRAMs

  • Single wide power supply range - 2.3 to 3.6 V
  • Very low standby current - 2.0 µA at 3.0 V (Typical)
  • Very low operating current - 2.0 mA at 3.0 V and 1 µs (Typical)
  • Very low page mode operating current - 0.8 mA at 3.0 V and 1 µs (Typical)
  • Simple memory control: Single chip enable (CE), byte control for independent byte operation, output enable (OE) for memory expansion
  • Low voltage data retention
  • 30 ns OE access time
  • Automatic power down to standby mode
  • TTL compatible three-state output driver
  • Compact space saving BGA package available

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