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NVBG020N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 20 mΩ, D2PAK−7L

Datasheet: MOSFET — Power, Silicon Carbide, Single N-Channel, D2PAK7L, 1200 V, 98 A, 20 mΩ
Rev. 2 (259kB)
製品概要
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» 製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 1200V rated
   
  • Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A
   
  • High Speed Switching and Low Capacitance
   
  • 100% UIL Tested
   
  • Devices are RoHS Compliant
   
アプリケーション   最終製品
  • High power DCDC
  • Inverter
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters
Availability & Samples
Specifications
Interactive Block Diagram
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NVBG020N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVBG020N120SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $19.5995
マーケットリードタイム(週) : 13 to 16
Avnet   (2020-08-19 00:00) : <1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVBG020N120SC1  
 $19.5995 
Pb
A
H
P
 Active   
N-Channel
Single
1200
98
20
220
258
175
D2PAK7 (TO-263-7L HV)
Case Outline
Application
Diagram - Block
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