Highly Optimized Technologies Enable Next-gen DC Fast Charging

Our technologies are crafted to meet demands of higher power and density DC fast charging.

25kW SiC Module Based DC Fast Charging System

onsemi helps you to develop a bidirectional DC fast charging/EVSE.

ソリューション

Our leading silicon carbide (SiC) technology and continuous innovation in packaging solutions help simplify the design process of EV chargers. With a comprehensive portfolio of discrete power and analog solutions, protections, sensing, and connectivity, onsemi offers high-quality components to tailor the system to your needs. Our system expertise has been fostered over the last 20 years while bringing together all these technologies to deliver well-rounded solutions.

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SiC Module Based DC Fast Charging System

25kW SiC Module Based DC Fast Charging System

Our system expert will guide you and highlight the key challenges, trade-offs, and compromises made, and show how to design, build and validate the charging system from scratch using our 25kW SiC module based DC fast charging system reference design.

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SiC Modules

Full SiC & Hybrid SiC Modules

Our package technologies optimized for

  • Superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts

onsemi SiC Diode Families

Family

Voltages

Optimization

Best Application

D1

View

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

D2

View

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

D3

View

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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onsemi SiC MOSFET Families

Family

Voltages

Optimization

Best Application

M1

View

1200V, 1700V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

More Details

M2

View

650V, 750V, 1200V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

More Details

M3

View

1200V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

More Details

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Evaluation/Development Kits

SEC-25KW-SIC-PIM-GEVK

Full SiC module-based 25kW DC EV charger platform

SECO-HVDCDC1362-15W-GEVB

15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications

SECO-GDBB-GEVB

Gate drivers plug-and-play ecosystem

SECO-HVDCDC1362-40W-GEVB

40 W SiC high-voltage auxiliary power supply for HEV & BEV applications

SECO-LVDCDC3064-IGBT-GEVB

6 - 18 Vdc Input Isolated IGBT Gate Driver Supply +15 V / -7.5 V / 7.5 V with Automotive Qualified NCV3064 Controller

SECO-LVDCDC3064-SIC-GEVB

6-18 Vdc Input Isolated SiC Gate Driver Supply +20V/-5V/5V with Automotive Qualified NCV3064 Controller Evaluation Board

Technical Documents

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

Fast DC EV Charging: Common Topologies and Power Devices Used in the System

In this paper, we will discuss an overview of typical power converter topologies and power devices for the AC−DC and the DC−DC used in fast DC EV charging.

Electric Vehicle DC Fast Charging: Holistic Overview

E−mobility and vehicle electrification buzz has been around for a while now. Strikingly enough, the first electric vehicles (EV) appeared in the late XIX century.

Reliability and Quality for IGBTs

In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

High Efficiency DC-DC Converter Module

The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

Reading onsemi IGBT Datasheets

The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

Standard Gate-Driver Optocouplers

The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

MOSFET Basics

The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

Galvanic Isolation Gate Driver Design Tips

This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

SiC MOSFETs: Gate Drive Optimization

This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

Power Packages Heat Sink Mounting Guide

This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

650 V Super-Junction MOSFET for High Efficiency and Reliable EV Charging Applications

This document describes best in class body diode performance and low dynamic COSS loss of SUPERFET III FRFET. Due to the very low A·RDS(ON) of the SUPERFET III FRFET, it is highly optimized for the two−level FB LLC resonant converter for high power fast EV charging applications.

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