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NCP51820GAN1GEVB: NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT

The NCP51820 HB GaN Driver Evaluation Board (EVB) is intended to replace the driver and power MOSFETs used in existing half−bridge or full−bridge power supplies. This EVB highlights the performance, simplicity and minimal number of components required to efficiently and reliably drive two gallium nitride power switches used in a high−voltage, totem pole configuration. Intended applications include off−line power converter topologies such as: LLC, phase−shifted full−bridge, totem pole PFC, active clamp flyback and forward, dual active−bridge, Phi−2 and high voltage synchronous buck.
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製品 状態 Compliance 簡単な説明 使用パーツ アクション
NCP51820GAN1GEVB Active
Pb-free
NCP51820 GaN driver evaluation board for 650 V, 50 mOhm E-mode GaN HEMT NCP51820AMNTWG
技術文書
タイプ ドキュメント・タイトル ドキュメント ID/サイズ 修正
Eval Board: BOM NCP51820GAN1GEVB Bill of Materials (ROHS Compliant) NCP51820GAN1GEVB_BOM_ROHS - 123 KB  2 
Eval Board: Gerber NCP51820GAN1GEVB Gerber Layout Files (Zip Format) NCP51820GAN1GEVB_GERBER - 316 KB  0 
Eval Board: Schematic NCP51820GAN1GEVB Schematic NCP51820GAN1GEVB_SCHEMATIC - 22 KB  0 
Eval Board: Test Procedure NCP51820GAN1GEVB Test Procedure NCP51820GAN1GEVB_TEST_PROCEDURE - 754 KB  0 
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