The Quest for Power Density (GaN)
In recent days power density became an important and increasingly universal figure of merit of power supply and power system innovation and performance. Achieving high power density implies the utilization of the latest topological advances in power conversion, employing state of the art control methods and using the best semiconductor technology available for the designer.
In this paper and corresponding presentation we endeavor on a journey connecting these pieces of the puzzle to obtain high power density. We will take a look at the latest trends of power supply design, technological benefits and cost advantages of designing for high power density and how the latest semiconductor technologies – primarily GaN power switches – can help us to reach our ultimate goal of a high efficiency, high performance, high reliability and low cost solution.
Important details on critical characteristics of GaN devices, layout and drive requirements and application examples with waveforms will add practical aspects to the discussion.
Principal Applications Engineer, ON Semiconductor
Steve is a Member of the Technical Staff working as a Principal Applications Engineer in ON Semiconductor’s Analog Solutions Group (ASG) located in Bedford, NH, USA.
In his current role, he is responsible for technology development related to power-supply controllers and MOSFET gate drive ICs. He has more than 25 years of power supply design experience, including 10 years designing military and commercial power systems for commercial and military avionic applications. He has spent the last sixteen years working within the field of power management semiconductors, specializing in Systems and Applications Engineering.
His areas of interest include high-power converter topologies, soft-switching converters, synchronous rectification, high-frequency power conversion and magnetic component design, advanced power supply control techniques, WBG devices and power factor correction.
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