シリコンカーバイド(SiC)

オンセミ(onsemi)のEliteSiC製品は、当社のエンドツーエンドのSiC製造能力とともに、優れた性能と厳格な品質基準を備えた製品を提供します。

By Technology

シリコンカーバイド(SiC)ダイオード
これらの製品は、全く新しい技術を用いて、シリコン製品よりも優れたスイッチング性能と高い信頼性を提供します。
シリコンカーバイド(SiC)MOSFET
これらの製品は、高速かつ堅牢な設計に貢献し、高効率からシステムサイズとコストの削減に至る、システムの利点を享受できます。

Power Module

Silicon Carbide (SiC) Modules

These products contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V.

Si/SiC Hybrid Modules

Si/Sic Hybrid modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar

Complete End-to-End Silicon Carbide (SiC) Supply Chain

We have developed an internal supply chain from substrates and assembly to packaging to assure customer supply of SiC devices to support the rapid growth of the sustainable ecosystem.

End-to-End SiC Manufacturing Capabilities Advance a Sustainable Future

Our SiC end-to-end manufacturing is contributing to a more sustainable future. Together with our manufacturing capabilities, EliteSiC family of products offers the superior performance and exacting quality standards of products to meet the needs of EV, energy infrastructure, and industrial drive applications.

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EliteSiC MOSFET Families

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Seris

650 V

900 V

1200 V

1700 V

Primary Applications

M1

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M1

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M2

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M2

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M3

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M3S

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M3T

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Voltages

Optimization

Best Application

M1

1200V, 1700V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

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M2

650V, 750V, 1200V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

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M3

1200V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

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EliteSiC Diode Families

Family

650 V

900 V

1200 V

1700 V

Primary Applications

D1

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D2

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D3

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Voltages

Optimization

Best Application

D1

650V, 1200V, 1700V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

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D2

650V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

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D3

1200V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

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EliteSiC MOSFETs

Faster Switching More Compact End-Product

1200V M3S EliteSiC MOSFETs provide up to 20% power loss reduction in hard switching applications compared to industry leading competition

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EliteSiC Modules

Full SiC & Hybrid SiC Modules

Our package technologies are optimized for:

  • Superior performance
  • Lower thermal resistance than discrete devices
  • Easy to mount packages to fit industry standard pinouts

Evaluation/Development Kits

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