シリコンカーバイド(SiC)MOSFET

Overview
製品
技術文書

These SiC MOSFETs are designed to be fast and rugged. They offer a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP capable options specifically engineered and qualified for automotive and industry applications. System benefits include highest efficiency by lowering power loss, greater power density, higher operating frequency, increased temperature operation, reduced EMI, and most importantly reduced system size and cost.

Product Family

650 V SiC MOSFETs

Selection of 650 V products.

900 V SiC MOSFETs

Selection of 900 V products.

1200 V SiC MOSFETs

Selection of 1200 V products.

Featured New Products

View All Products
Related Products Icon

NTBG015N065SC1

Silicon Carbide MOSFET, N‐Channel, 650 V, 15.3 mΩ
Related Products Icon

NTBG020N090SC1

Silicon Carbide MOSFET, N‐Channel, 900 V, 20 mΩ
Related Products Icon

NTH4L060N090SC1

Silicon Carbide MOSFET, N‐Channel, 900 V, 60 mΩ

Evaluation Boards

EV/DEV Kit Icon

SEC-6D6KW-OBC-SIC-GEVB

6.6 kW On Board Charger (OBC) SiC Model
EV/DEV Kit Icon

SEC-6D6KW-OBC-TTP-GEVB

6.6 kW OBC Evaluation Board using Totem pole Topology
EV/DEV Kit Icon

SECO-HVDCDC1362-40W-GEVB

40 W SiC High-Voltage Auxiliary Power Supply for HEV/EV Applications

Related Resources

SiC MOSFETs Gate Drive Optimization Overview Tutotrial Thumbnail

White Paper

SiC MOSFETs: Gate Drive Optimization

For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs.

Scalable SPICE Modeling Methodologies Overview Tutotrial Thumbnail

White Paper

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

Efficient power electronic design hinges on the availability of accurate and predictive SPICE models. This paper proposes novel physical and scalable SPICE models for power electronic semiconductors including wide−bandgap devices.

The Difference Between GaN and SiC Transistors Overview Tutotrial Thumbnail

White Paper

The Difference Between GaN and SiC Transistors

For decades, silicon has dominated the transistor world. But that has been gradually changing. Compound semiconductors made of two or three materials have been developed and offer unique benefits and superior characteristics.

Videos

Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities

Utilizing Wide Bandgap in Solar and Renewable Energy Applications

Utilizing Wide Bandgap in Server and Industrial Power Applications

Silicon and Silicon Carbide MOSFETS for Industrial Applications

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.