Jun 9 – 11, 2026 | Messe Nuremberg | Hall 9, Booth 332
The Future of Power From End to End
Book a Meeting Request a Free CodeExperience system-level demonstrations of onsemi's end-to-end power semiconductor solutions, from die to package to system. See how Si, SiC, SiC JFET, and GaN technologies come together to deliver higher density and efficiency across the applications that matter most, including:
SiC JFET-based energy storage systems, DC/DC converters for naval and grid applications.
Combined traction driver boards, 150 kW inverter systems, and B6S inverter architectures integrated into a full automotive system demo.
48V and 800V IBC evaluation boards and robotics motor drive solutions showcasing the next generation of power conversion.
Full power tree demonstrations featuring 800V SiC JFET modules, high-density IBC converters, and a 33 kW board, showing the complete path from grid to chip.
Join us for a hands-on session and learn how onsemi can help you design your switching applications to achieve your system's optimal performance with the best trade-offs. We'll guide you through a clear, step-by-step workflow, no black boxes, and demonstrate results in an active waveform viewer. Expect practical guidance and direct interaction with the onsemi expert team.
Two identical sessions will be held during the show, giving you flexibility to attend on the day that fits your schedule. Sessions are limited to 10 participants per session to ensure a small group setting with real technical depth. Reserve your spot to secure a place.
Dates: Tue June 9 and Wed June 10, 2026
Time: 12 p.m. – 1 p.m. CET
Location: onsemi booth in Hall 9-332, Meeting Room 1
Register NowExplore system-level demonstrations spanning AI data center power delivery, electric vehicle traction and charging, energy storage, and industrial power conversion. Each demo reflects real-world operating conditions and is designed around actual customer applications, not standalone components.
Experience an interactive demo showing how onsemi can help you design your switching applications to achieve optimal system performance with the best trade-offs:
Explore onsemi's growing GaN, SiC, and Si portfolios for high-efficiency power conversion, including:
GaN 48V and 800V IBC Evaluation Boards: demonstrating high-efficiency GaN-based intermediate bus conversion for data center and industrial power architectures
Robotics Motor Drive with GaN: GaN-enabled motor drive solution targeting precision robotics and automation.
Vertical GaN EliteSiCDiscover high-performance eMobility solutions for traction and charging, including:
150 kW full-SiC traction inverterstrong> for electric vehicle drivetrains, paired with a traction driver board that brings analog mixed-signal control and power stage gate driving together on a single platform, complemented by an in-depth lab video.
100 kW DC Fast Charger: Static reference board for megawatt-class charging infrastructure.
DC Fast EV Charging Ultra-fast EV ChargerDiscover onsemi's latest power module and protection technologies for industrial and automotive applications, including:
Power Modules: Latest form factors driving increased power density for industrial and automotive applications.
FS7 IGBT Technology: Addressing grid-scale energy, industrial drives, and automotive power systems at 750V and 1400V.
Energy infrastructure solutions
Solid-State Circuit Breaker: Enhanced protection and faster switching speed supporting safe inrush and fast and safe disconnect for high-voltage EV and industrial architectures.
Solid-state circuit breakerExplore advanced power architectures for next-generation AI data centers, including:
800V to 12V IBC Converter: New intermediate bus converter bridging high-voltage distribution to rack-level 12V rails.
800V to 50V IBC Converter: Supports 48/50V power distribution architectures in next-generation data center designs.
Vcore Demo: Point-of-load power delivery optimized for high-current AI processor and accelerator loads.
33 kW PFC Reference Design: Front-end AC/DC conversion stage for server rack power delivery with high power factor correction.
Data center solutions: https://www.onsemi.com/solutions/computing/data-center
Headlamp Zonal System Solution: 10BASE-T1S: Demonstrates a headlamp zonal architecture using 10BASE-T1S to enable simplified wiring, scalable connectivity, and reliable data and power distribution.
Inductive Position Sensing for Brake Pedal: Shows high-precision, contactless brake pedal position sensing designed for robustness and safety-critical automotive applications.
Inductive Position Sensors Product Page
Ultrasonic Sensing for ADAS: Demonstrates ultrasonic sensing for near-field ADAS functions, enabling accurate distance measurement and reliable obstacle detection.
Get Complete Block Diagrams Ultrasonic Sensor Product page
SmartFET for Zonal Power Protection: Highlights intelligent load control and fault protection using SmartFET devices optimized for zonal automotive architectures.
Get Complete Block Diagrams SmartFET Products Page
3MP Surround View System (SVS) Use Case: Features the AR0341 3MP image sensor delivering flicker-free HDR imaging in a compact form factor with stable performance across temperature and lighting conditions.
Get Complete Block Diagrams AR0341 Product Page
8MP Rear ADAS + E-Mirror Use Case: The onsemi 8MP automotive image sensor provides Ultra High Dynamic Range and outstanding low light performance powering next gen ADAS and e mirror functions. One sensor elevates visibility, confidence, and safety across the vehicle.
Come to the onsemi booth at PCIM and step into the cockpit to feel what happens when advanced power semiconductors meet precision motor control.
Feel what onsemi's SiC power modules deliver when paired with true direct-drive motor architecture. Higher switching frequencies produce cleaner torque waveforms, lower losses sustain peak output without thermal derating, and transient response is fast enough to reproduce sub-degree tire slip changes as real mechanical force in your hands.
Closed-loop force feedback driven by SiC power stages responding directly to physics simulation output. Surface changes, weight transfer, and grip transitions arrive with sub-millisecond latency.
Higher switching frequencies enable finer torque resolution. Lower losses eliminate thermal throttling under sustained peak load. Fidelity that conventional silicon IGBTs cannot match.
Motor shaft to steering column with zero mechanical compliance. No belts, no gears, no backlash. Full dynamic range from subtle road texture to violent curb strikes.
Designed and manufactured in Europe. Trusted by 300+ companies across 84 nations for industrial controllers, test benches, and custom motion systems.
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Topic
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Speaker
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Stage
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Time
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Automated Deskew of Double-Pulse Measurements for Precise Switching Loss Calculation
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Philipp Rehlaender
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Conference - Stage Kyjiw
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11 a.m. - 11:20 a.m.
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A Measurement-Based Methodology for Determining the Minimum Dead-Time
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Philipp Rehlaender
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Poster Sessions, Hall 4A
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12:45 p.m. - 2:30 p.m.
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Impact of Kelvin-Source vs. Power-Source Sensing in Si/SiC Power Switch Characterizations
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Deekshith Venkatesha Prabhu
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Poster Sessions, Hall 4A
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12:45 p.m. - 2:30 p.m.
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A Modified DPT Platform Enabling Faster Inductor Discharge and Extended Current Range
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Mohammad Vedadi
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Poster Sessions, Hall 4A
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12:45 p.m. - 2:30 p.m.
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Topic
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Speaker
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Stage
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Time
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Design Considerations to Meet Future Datacenter Power Supply Needs
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Jeevan Thomas
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Poster Sessions, Hall 4A
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12:45 p.m. - 2:30 p.m.
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Temperature Effects on SiC MOSFET Reliability: Separating Artifacts From True Degradation
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Sara Kuzmanoska
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Poster Sessions, Hall 4A
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12:45 p.m. - 2:30 p.m.
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Reliability Testing of 1.2 kV SiC MOSFETs: Impact of VDS Bias and Load Current on Long-Term Switching Operation
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Sara Kuzmanoska
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Poster Sessions, Hall 4A
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15:30 p.m. - 5:00 p.m.
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Selecting a Gate Driver with a MOSFET or an IGBT to Achieve Optimal System Performance
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Didier Balocco
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Exhibitor stage, Hall 4A-320
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12:55 p.m. - 1:15 p.m.
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Topic
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Speaker
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Stage
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Time
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Next Generation 1200V SiC MOSFET With Soft Body Diode for EV Traction Inverter
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Hansol Seo
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Poster Sessions, Hall 4A
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11:15 a.m. – 12:45 p.m.
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A Novel Physics-Based SPICE Model for 1.2kV Vertical GaN Fin-JFETs
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Kan Jia
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Poster Sessions, Hall 4A
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11:15 a.m. – 12:45 p.m.
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1.2kV Cascode SiC JFET Accomplished Switching Frequency Beyond 700kHz at 800V IBC Matrix LLC Topology
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Yusi Liu
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Exhibitor Stage, Hall 4A-320
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11:40 a.m. – 12 p.m.
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Meet onsemi engineers, system architects, and application specialists who design and support our power semiconductor portfolio. Discuss your specific challenges across SiC, SiC JFET, GaN, Si, packaging, gate drivers, and system integration.
Meet Our Experts
Paul Klausner
Meet Our Experts
Didier Balocco
Meet Our Experts
Alessandro Maggioni
Meet Our Experts
Cecilia Contenti
