Gallium nitride (GaN) is a wide bandgap semiconductor with lower resistance to current flow, that enables at application level, higher switching frequency, greater power density, and improved efficiency compared to traditional silicon power devices. These characteristics allow designers to reduce magnetics size, improve thermal performance, and enable more compact, efficient power systems across a wide range of applications.

GaN delivers the greatest system level value in high frequency, power density driven conversion stages, where switching speed and efficiency directly impact system size and thermal performance. These stages commonly include intermediate bus conversion (IBC), isolated DC-DC conversion, point-of-load (PoL) regulation, and motor drive and actuation stages. In lower frequency or very high power front end stages, other technologies may be more appropriate. These power conversion stages appear across many systems. In AI data centers and cloud infrastructure, GaN enables dense, fast responding power delivery for advanced compute. In robotics and industrial automation, GaN improves efficiency and compactness in motor drives and actuation stages. In automotive power systems, GaN supports high density auxiliary and DC DC conversion across multiple voltage domains. In energy infrastructure and industrial power, GaN enables more compact and efficient high frequency isolated conversion.

Gallium nitride power technology supports a broad voltage range through two main device architectures: lateral GaN and vertical GaN. Lateral GaN devices are commonly used from approximately 30 V up to 650 V, and in some designs approaching 900 V, making them well suited for high-frequency, high-density conversion stages such as DC DC, isolated DC DC, and motor drives. Vertical GaN extends GaN capability into ultra high-voltage domains – typically above 900 V and beyond 1200 V. With it’s unique structure of GaN grown on top of GaN substrate, vertical GaN improves scalability and robustness for advanced high voltage power architectures. The GaNEXUS™ portfolio span this full GaN voltage spectrum, from low , medium- and high voltage lateral GaN FETs to ultra-high-voltage vertical GaN, allowing GaN to be applied where it delivers the greatest system level benefit.

GaN, silicon, and silicon carbide (SiC) each excel in different parts of a power architecture. Silicon remains cost-effective and efficient for lower-frequency and lower- power applications. SiC is well suited for high-voltage, high-power front-end conversion, where efficiency and robustness are critical. GaN excels in applications that benefit from high switching frequency and power density, enabling smaller, more compact designs. Modern power systems often combine all three technologies, optimized by stage rather than replaced wholesale.

Bidirectional GaN devices allow power to flow efficiently in both directions using a single device structure, rather than back-to-back unidirectional switches. This can reduce component count, switching losses, and system complexity. Bidirectional GaN is particularly valuable in applications such as energy storage systems, automotive DC DC “Matrix” conversion and T-type traction inverter, advanced data-center power architectures, and many AC/DC or DC/DC systems that require efficient two-way energy flow.

Integrated GaN power devices combine GaN transistors with additional functions such as gate drive, protection, sensing, or control in a single device. Integration can simplify and accelerate board design, improve reliability, and enhance system level performance by reducing parasitic and control complexity. GaNEXUS integrated power – such as Drive, Smart, and Control devices – are designed to support this increasing level of power integration over time.

GaNEXUS applies GaN with a focus on deployment-ready power systems, addressing not only performance but also reliability, manufacturability, and lifecycle support. Built on onsemi’s wide-bandgap leadership and expertise, and multi-source manufacturing, GaNEXUS solutions are engineered with qualification rigor, long-term availability, and robustness—helping customers adopt GaN with confidence.