Power the next generation computing with high‑efficiency, high‑reliability advanced semiconductors designed for AI platforms, cloud and data center scalability.
Modern AI platforms, cloud data centers, enterprise servers, and high-performance computing systems require scalable, energy-efficient power architectures to support increasingly demanding processors, accelerators, GPUs, and memory subsystems. Reliable power delivery is essential for maximizing system performance, improving energy efficiency, and reducing operational costs.
onsemi delivers advanced power semiconductor solutions for computing infrastructure, including AC-DC power conversion, DC-DC regulation, point-of-load (PoL) power delivery, hot-swap protection, and intelligent power management. Leveraging innovative Silicon Carbide (SiC), Gallium Nitride (GaN), MOSFET, and mixed-signal technologies, onsemi helps designers achieve higher power density, improved efficiency, and greater system reliability across AI servers, cloud computing platforms, data centers, edge computing systems, and enterprise IT infrastructure.
With deep expertise in power conversion and computing architectures, onsemi enables next-generation computing systems that support the growing demands of artificial intelligence, machine learning, hyperscale data centers, and high-performance processing applications.
Vertical GaN technology is a breakthrough power semiconductor technology that delivers record efficiency, power density and ruggedness for the future of AI computation.
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CJFETs combine SiC performance with simple gate‑drive integration to boost PSU efficiency, cut BOM cost, and enable smaller, lighter designs for AI servers and industrial systems.
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Learn how 650V EliteSiC M3S and PowerTrench® T10 MOSFETs deliver high power density and efficiency for AI data centers.
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The Treo Platform (BCD 65nm) enables the next-generation of power management ICs, sensor interfaces, communications devices and standard products.
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Our SiC MOSFETs are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost. MOSFETs are metal–oxide–semiconductor field-effect transistors with insulated gates. These silicon carbide MOSFETs have a higher blocking voltage and higher thermal conductivity than silicon MOSFETs, despite having similar design elements. SiC power devices also have a lower state resistance and 10 times the breakdown strength of regular silicon. In general, Systems with SiC MOSFETs have better performance and increased efficiency when compared to MOSFETs made with silicon material.
There are many advantages to choosing SiC MOSFETs over silicon MOSFETs, such as higher switching frequencies. High-temperature development is also not a concern when using SiC MOSFET modules because these devices can operate efficiently even in high heat. Additionally, with SiC MOSFETs, you benefit from a more compact product size because all components (inductors, filters, etc.) are smaller.
Explore a comprehensive overview of the latest technologies and our solutions for optimizing and developing AI data centers.
The uninterruptible power supplies protect the connected equipment from power problems and provide battery backup during power outages.
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