新製品

8.3MP Evaluation Board with 8.3MP RGB 11deg Electronic Rolling Shutter CMOS Image Sensor

8.3MP Evaluation Board with 8.3MP RGBIR 11deg Electronic Rolling Shutter CMOS Image Sensor

8.3MP Evaluation Board with 8.3MP Mono 11deg Electronic Rolling Shutter CMOS Image Sensor

20MP 1/1.8 CIS MPBGA78 RGB 13DEG CRA SER Demo3 HB

20MP 1/1.8 CIS MPBGA78 MONO 13DEG CRA SER Demo3 HB

CEM102 Evaluation and Development Board

NCV77320 Evaluation Kit

NIV3071MTW3TWG WQFNW-16 EVAL BOARD

NIV3071MTW4GEVB WQFNW-16 EVAL BOARD

LDO, 1A, Low noise, Fixed and Adjustable, Controlled slew rate

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General Purpose Transistor Medium Power, PNP 80 V, 1 A    

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General Purpose Transistor Medium Power, NPN 80 V, 1 A

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Silicon Carbide (SiC) Module – EliteSiC, 8 mohm, 1200V, M3S, TNPC Topology, F2 Package

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Intelligent Power Module, SPM31, 1200V, 15A

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Intelligent Power Module, SPM31, 1200V, 25A

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Intelligent Power Module, SPM31, 1200V, 35A

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Analog front end (AFE) for very low power Continuous Glucose Measurements (CGM) and similar applications

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Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, Die

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Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L

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Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L

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Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

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Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

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Bluetooth® 5.2 Secure Wireless MCU for Automotive

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Electronic fuse (eFuse) 4-channel, 8V to 60V, 10A in 5x6mm package

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Image Sensor, 20 MP, Rolling Shutter, Hyperlux™ LP

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MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.9mΩ, 201 A

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Power MOSFET, Single N-Channel, SO8FL 40V, 2.35mΩ, 111A

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MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.1mΩ, 181 A

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MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.6mΩ, 154 A

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Power MOSFET, Single, N-Channel, SO8FL, 40V, 3.1mΩ, 83A

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MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 3.0mΩ, 135 A

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MOSFET, Power, Single N-Channel 80V

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Single N-Channel Power MOSFET 80V, 201 A, 1.9 mΩ

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Single N-Channel Power MOSFET 80V, 181 A, 2.1 mΩ

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Single N-Channel Power MOSFET 80V, 156 A, 2.5 mΩ

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Single N-Channel Power MOSFET 80V, 144 A, 3 mΩ

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Single N-Channel Power MOSFET 40 V, 65 A, mΩ4.7

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Single N-Channel Power MOSFET 40 V, 195A, 1.3 mΩ

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Single N-Channel Power MOSFET 40 V, 66 A, 4.9 mΩ

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D3, TO-247-2L

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-2L

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

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3-Input AND Gate with Schmitt-Trigger Inputs

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High Side Gate Driver, 130 V, 2.0 A / 3.0 A

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22 V/5.5 A Capable OTP/OVP/IDTRCB Power Switch

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IGBT - Automotive Grade 1200 V 40 A

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EcoSPARK®2 HV-HE IGBT 500 mJ, 560 V, N-Channel PTC Heater IGBT

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TinyLogic UHS Unbuffered Inverter

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Unbuffered Single Inverter

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